SKM500MB120SC ? by semikron rev. 0.1 C 27.05.2015 1 semitrans ? 3 mb sic mosfet module SKM500MB120SC target data features full silicon carbide (sic) power module latest generation sic mosfets optimized for fast switching and lowest power losses insulated copper baseplate using dbc technology (direct bonded copper) ul recognized, file no. e63532 typical applications* high frequency power supplies ac inverters remarks case temperature limited to tc=125c max. recommended top= -40+150c absolute maximum ratings symbol conditions values unit mos-chip v ds 1200 v i d t j = 175 c t c =25c 541 a t c =80c 431 a i dm 1920 a v gs -6 ... 22 v t j -40 ... 175 c integrated mos-diode i f = - i s a i fm = - i sm a module i t(rms) 500 a t stg -40 ... 125 c v isol ac sinus 50 hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit mos-chip v (br)dss v gs =0v, i d =1ma 1200 v v gs(th) v gs =v gs , i d = 106.8 ma 1.6 4 v i dss v gs =0v t j =25c 11 0 a t j =125c a i gss v gs =22v, v ds =0v 100 na r ds(on) v gs =18v i d = 264 a t j =25c 3.75 4.67 m t j =150c 5.67 m c iss v gs =0v v ds = 800 v f=1mhz 44.4 nf c oss 1.644 nf c rss 0.336 nf r gint 25 c 0.39 q g v gs = 18 v 2268 nc t d(on) v dd =600v i d = 250 a v gs = -6 ... 20 v r gon =2 r goff =2 di/dt on = 7000 a/s di/dt off =6800a/s t j =150c 270 ns t r t j =150c 70 ns t d(off) t j =150c 400 ns t f t j =150c 65 ns e on t j =150c 10.3 mj e off t j =150c 4.7 mj r th(j-c) 0.07 k/w r th(c-s) 0.035 k/w integrated mos-diode v sd , v gs =0v v t rr s q rr c irr a
SKM500MB120SC 2 rev. 0.1 C 27.05.2015 ? by semikron semitrans ? 3 mb sic mosfet module SKM500MB120SC target data features full silicon carbide (sic) power module latest generation sic mosfets optimized for fast switching and lowest power losses insulated copper baseplate using dbc technology (direct bonded copper) ul recognized, file no. e63532 typical applications* high frequency power supplies ac inverters remarks case temperature limited to tc=125c max. recommended top= -40+150c characteristics symbol conditions min. typ. max. unit module l ds 15 nh r cc'+ee' terminal-chip 0.55 m 0.85 m rth (c-s)1 per module t.b.d k/w rth (c-s)2 including thermal coupling, ts underneath module k/w m s to heat sink m6 3 5 nm m t to terminals m6 2.5 5 nm nm w 325 g
SKM500MB120SC ? by semikron rev. 0.1 C 27.05.2015 3 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. semitrans 3
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